파트넘버.co.kr PJ4812 데이터시트 PDF


PJ4812 반도체 회로 부품 판매점

30V N-Channel Enhancement Mode MOSFET



Pan Jit International 로고
Pan Jit International
PJ4812 데이터시트, 핀배열, 회로
PJ4812
30V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@8A=17m
• RDS(ON), VGS@5.0V,IDS@6A=34m
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: SOIC-08 Package
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : 4812
SOIC-08
8 76 5
123 4
ABSOLUTE MAXIMUM RATINGS (TC=25oC unless otherwise noted )
PIN Assignment
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5. Drain 2
6. Drain 2
7. Drain 1
8. Drain 1
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continous Drain Current
TC=25oC
Pulsed Drain Current (1)
Avalanche Energy
L=0.1mH,I D=8A,VDD=25V
Power Dissipation
TC=25oC
TC=75oC
Operating Junction and Stroage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB Mounted)2
www.DataSheet4U.com
Note : 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
SYMBOL
VDS
VGS
ID
I DM
EAS
PD
TJ,TSTG
RΘJA
VALUE
30
+20
8
32
3.2
2.4
1.2
-55 to +175
62.5
UNIT
V
V
A
A
mJ
W
oC
oC/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
December 01.2009-REV.00
PAGE . 1


PJ4812 데이터시트, 핀배열, 회로
PJ4812
E LE C TRIC A L C HA RA C TE RIS TIC S (TC=2 5 oC ,Unle ss Otherwi se No te d )
PA RA ME TE R
S TATIC
Drai n-Source Breakdown Voltage
Gate Threshold Voltage
D rai n-S ource On-state
Resi stance
Gate-Body Leakage
Zero Gate Voltage Drain
C urrent
On-State D rai n C urrent
F o r wa rd Tra ns c o nd uc ta nc e
D YNA MIC
To t a l G a t e C h a r g e
S YM B OL
V (BR)DSS
V GS(TH)
R D S (ON)
I GSS
I DSS
I D(ON)
gfs
QG
TE S T C OND ITIONS
V GS=0 V,I D=25 0µA
V DS=V GS,I D=250µA
VGS=10V,I D=8A
VGS=5V,I D=6A
V DS=0V,V GS=+20 V
V DS= 2 4 V,V GS= 0 V
V DS=24V,V GS=0V,TJ=125oC
V DS= 1 0 V,V GS= 1 0 V
VDS=5V,I D=8A
V DS=15V ,V GS=5V,I D=8A
Gate-Source Charge
Gate-Drain Charge
Q GS
QGD
V DS=1 5V ,V GS=10 V
I D=8A
Turn- On D e la y Ti me
td(on)
Ri s e Ti m e
Turn- Off D e la y Ti m e
tr
td(off)
VDS=15V,I D=1A ,VGS=10 V
R GS = 6
F a ll Ti me
tf
Input C apaci tance
Output C apaci tance
Re ve rs e Tra ns fe r C a p a c i t a nc e
C IS S
C OSS
C RSS
V GS=0V,V DS=15 V
f=1MHz
Gate Resi stance
Rg V GS=15mV,V DS=0V,f=1MHz
S OURC E -D RA IN D IOD E RATINGS A ND C HA RA C TE RIS TIC S
C onti nuous C urrent
IS
Forward Voltage
V SD
I F=2 .3A,V GS=0 V
NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%.
MIN.
30
1
-
-
-
-
-
8
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
MA X . UNIT
- -V
- 3V
15 17 m
26 34 m
-
+100
nA
- 1 µA
- 25 µA
- -A
- -S
7.0
14.2
1.22
3.44
7.8
11 .6
28.8
5.6
520
112
98
2.0
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
- 2.3 A
- 1.2 V
Switching
Test Circuit
www.DataSheet4U.com
VIN
RG
VDD
RL
VOUT
Gate Charge
Test Circuit
VGS
1mA
RG
VDD
RL
December 01.2009-REV.00
PAGE . 2




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Pan Jit International

( panjit )

PJ4812 mosfet

데이터시트 다운로드
:

[ PJ4812.PDF ]

[ PJ4812 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


PJ4812

30V N-Channel Enhancement Mode MOSFET - Pan Jit International