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PDF BF9024SPD-M Data sheet ( Hoja de datos )

Número de pieza BF9024SPD-M
Descripción P-Channel MOSFET and Schottky Diode
Fabricantes BYD 
Logotipo BYD Logotipo



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BF9024SPD-M
BYD Microelectronics Co., Ltd
P-Channel MOSFET and Schottky Diode
General Description
The BF9024SPD-M uses advanced trench technology to
Provide excellent RDS (ON) and low gate charge.
This device is suitable for used as a load switch or in
PWM applications.
Features
MOSFET
z VDS (V) = -20V
z ID = -2.7A
z Low on-state resistance
RDS (on) < 90mΩ . (VGS = -4.5V)
RDS (on) < 120mΩ .(VGS = -2.5V)
Schottky Diode
z VF=0.42V
Absolute Maximum Ratings (Ta = 25)
876 5
KD
12 34
1,2 Anode; 3 Source; 4 Gate
5,6 Drain; 7,8 Kathode
K: Kathode;D: Drain
Parameter
Mosfet
Drain to Source Voltage
(MOSFET and Schottky)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Maximun Power Dissipationa
Channel Temperature
Storage Temperature
Schottky Diode
Reverse Voltage
Average Forward Current
Pulsed Forward Current
Maximun Power Dissipationa
Storage Temperature
Symbol Ratings Unit
VDSS
VGSS
ID(DC)
ID(pulse)
PD
Tch
Tstg
-20 V
±8
-2.7
-10
1.1
150
-55~+150
V
A
A
W
VKA 20 V
IF 1 A
IFM 7 A
PD 0.96 W
Tstg -55~+150
Note a. Mounted on FR4 Board of 1”x1”.
Caution: These values must not be exceeded under any conditions.
Ordering Information
z BF9024SPD-M
z DFNWB3*1.8-8L
Datasheet
ES-BYD-WDZCE03D-070 Rev.A/1
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BF9024SPD-M pdf
BYD Microelectronics Co., Ltd.
Package Drawing
3.000±0.050
0.300±0.050
BF9024SPD-M
0.650 Bsc
1.800±0.050 DFNWB3.0*1.8-8L
PIN 1# DOT
BY MARKING
TOP VIEW
0.350±0.050
0.400±0.050
0.800±0.050
KD
1.950
Ref
PIN #1
IDENTIFICATION
CHAMFER 0.150 X 45º
BOTTOM VIEW
UNIT:MM
MAX
A NDM
MIN
0.800
0.750
0.700
A
0.013-0.050
SIDE VIEW
0.203 Ref.
NOTE:
1) Lead Plating Thickness: 0-0.050mm.
2Package body sizes exclude mold flash, protrusion or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 0.10mm per side.
3The size of the zone ”D” is the same as the “K”.
Datasheet
www.DataSheet.in
ES-BYD-WDZCE03D-070 Rev.A/1
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