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PDF RQ1C075UN Data sheet ( Hoja de datos )
| Número de pieza | RQ1C075UN | |
| Descripción | 1.5V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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1.5V Drive Nch MOSFET
RQ1C075UN
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(1.5V drive).
Application
Switching
Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : XH
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RQ1C075UN
Taping
TR
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
20
10
7.5
30
1
30
1.5
150
55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(8) (7) (6) (5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1) (2) (3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
83.3
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
1 page  
RQ1C075UN
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
VGS
IG(Const.)
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate charge measurement circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
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www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.04 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RQ1C075UN.PDF ] | |
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