KU063N03Q 반도체 회로 부품 판매점
N-Ch Trench MOSFET
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 KEC semiconductor |
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for DC/DC Converter and Battery pack..
FEATURES
VDSS=30V, ID=16A.
Drain to Source On Resistance.
RDS(ON)=6.3m (Max.) @ VGS=10V
RDS(ON)=10.7m (Max.) @ VGS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@Ta=25
Pulsed
Drain Power Dissipation @Ta=25
Maximum Junction Temperature
Storage Temperature Range
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
30
20
16
64
2.5
150
-55~150
V
V
A
A
W
Thermal Resistance, Junction to Ambient (Note 1) RthJA
50
/W
Note1) Surface Mounted on 1 1 FR4 Board, t 10sec.
KU063N03Qwww.DataSheet4U.com
N-Ch Trench MOSFET
DP
H
T
G
L
A
85
DIM
A
B1
B2
D
MILLIMETERS
4.85 +_ 0.2
3.94 +_ 0.2
6.02+_ 0.3
0.4 +_ 0.1
B1 B2
G 0.15+0.1/-0.05
H 1.63 +_ 0.2
14
L 0.65 +_ 0.2
P 1.27
T 0.20+0.1/-0.05
FLP-8
KU063N
03Q
PIN CONNECTION (TOP VIEW)
S1
S2
S3
G4
8D
7D
6D
5D
1
2
3
4
8
7
6
5
2010. 6. 17
Revision No : 0
1/4
KU063N03Q
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Forward Transconductance
Dynamic
Input Capaclitance
Ouput Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate to Source Charge
VGS=10V
VGS=4.5V
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
BVDSS
IDSS
IGSS
Vth
RDS(ON)
gfs
VGS=0V, ID=250 A
VGS=0V, VDS=30V
VGS= 20V, VDS=0V
VDS=VGS, ID=250 A
VGS=10V, ID=16A
VGS=4.5V, ID=13A
VDS=5V, ID=16A
(Note2)
(Note2)
(Note2)
30
-
-
1.0
-
-
-
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=15V, VGS=0V, f=1MHz (Note2)
f=1MHz
VDS=15V, VGS=10V, ID=16A (Note2)
VDS=15V, VGS=10V
ID=16A, RG=1.6
(Note2)
-
-
-
-
-
-
-
-
-
-
-
-
Source to Drain Diode Ratings
Source to Drain Forward Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
Qrr
VGS=0V, IS=16A
IS=16A, dI/dt=100A/ s
IS=16A, dI/dt=100A/ s
Note2) Pulse Test : Pulse Width 300 , Duty Cycle 2%
(Note2)
-
-
-
TYP.
-
-
-
-
5.3
8.9
52
1751
350
253
2.8
39.7
20.1
6.8
8.2
10.1
10.5
31.2
11.0
0.8
22.5
9.5
MAX. UNIT
-
1
100
3.0
6.3
10.7
-
V
A
nA
V
m
S
-
- pF
-
-
-
-
nC
-
-
-
-
ns
-
-
1.2 V
- ns
- nC
2010. 6. 17
Revision No : 0
2/4
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( kec )
KU063N03Q mosfet
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