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KU048N03D 반도체 회로 부품 판매점

N-Ch Trench MOSFET



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KEC semiconductor
KU048N03D 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
KU048N03Dwww.DataSheet4U.com
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converter.
FEATURES
VDSS=30V, ID=79A.
Low Drain to Source On-state Resistance.
: RDS(ON)=4.8m (Max.) @ VGS=10V
: RDS(ON)=6.5m (Max.) @ VGS=4.5V
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
123
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@TC=25
Pulsed
Single Pulsed Avalanche Energy
(Note1)
(Note2)
(Note3)
VDSS
VGSS
ID
IDP
EAS
30 V
20 V
84
A
336
124 mJ
@TC=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
PD
60
W
3.8
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
(Note1)
Tj
Tstg
RthJC
150
-55 150
2.1
/W
Thermal Resistance, Junction to Ambient (Note2) RthJA
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=18 H, IAS=84A, VDD=15V, VGS=10V, Starting Tj=25
40
/W
Marking
DPAK (1)
KU048N03
D
Type Name
Lot No
PIN CONNECTION (TOP VIEW)
D
2
2
1
G
2010. 6. 17
13
3
S
Revision No : 0
1/4


KU048N03D 데이터시트, 핀배열, 회로
KU048N03D
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
BVDSS
IDSS
IGSS
Vth
Drain to Source On Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate to Source Charge
VGS=10V
VGS=4.5V
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Source to Drain Diode Ratings
Source to Drain Forward Voltage
Reverse Recovery time
VSD
trr
Reverse Recovered charge
Qrr
Note 4) Pulse Test : Pulse width <300 , Duty cycle < 2%
TEST CONDITION
MIN.
VGS=0V, ID=250 A
VGS=0V, VDS=30V
VGS= 20V, VDS=0V
VDS=VGS, ID=250 A
VGS=10V, ID=30A
VGS=4.5V, ID=30A
VDS=5V, ID=30A
(Note4)
(Note4)
(Note4)
30
-
-
1.0
-
-
-
VDS=15V, f=1MHz, VGS=0V
f=1MHz
VDS=15V, VGS=10V, ID=30A (Note4)
VDD=15V, VGS=10V
ID=30A, RG=1.6
(Note4)
-
-
-
-
-
-
-
-
-
-
-
-
VGS=0V, IS=30A
IS=30A, dI/dt=100A/
IS=30A, dI/dt=100A/
(Note4)
-
-
-
TYP.
-
-
-
-
3.0
4.0
75
2772
550
398
3.5
64.5
32.2
8.2
14.7
11.6
16.4
57.8
19.8
0.8
26.7
17.6
MAX. UNIT
-V
1A
100 nA
3.0 V
4.8
m
6.5
-S
-
- pF
-
-
-
-
nC
-
-
-
-
ns
-
-
1.2 V
- ns
- nC
2010. 6. 17
Revision No : 0
2/4




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