파트넘버.co.kr QS8J5 데이터시트 PDF


QS8J5 반도체 회로 부품 판매점

4V Drive Pch Pch MOSFET



ROHM Semiconductor 로고
ROHM Semiconductor
QS8J5 데이터시트, 핀배열, 회로
www.DataSheet4U.com
4V Drive Pch + Pch MOSFET
QS8J5
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
Application
Switching
Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : J05
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8J5
Taping
TR
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
30
VGSS
20
ID
IDP *1
Is
Isp *1
5
20
1
20
PD *2
1.5
1.25
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
Inner circuit
(8) (7) (6)
(5)
2 2
1 1
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
83.3
100
Unit
°C / W /TOTAL
°C / W /ELEMENT
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.01 - Rev.A


QS8J5 데이터시트, 핀배열, 회로
QS8J5
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
IGSS
V(BR)DSS
IDSS
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
30
-
1.0
-
-
-
3
-
-
-
-
-
-
-
-
-
-
Data Sheet
www.DataSheet4U.com
Typ.
-
-
-
-
28
40
45
-
1100
150
130
9
40
90
55
10.0
3.6
3.0
Max.
10
-
1
2.5
39
56
63
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
A VGS=20V, VDS=0V
V ID=1mA, VGS=0V
A VDS=30V, VGS=0V
V VDS=10V, ID=1mA
ID=5A, VGS=10V
mID=2.5A, VGS=4.5V
ID=2.5A, VGS=V
S ID=5A, VDS=10V
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=2.5A, VDD 15V
ns VGS=10V
ns RL 6
ns RG=10
nC ID=5A, VDD 15V
nC VGS=5V
nC RL 3,RG=10
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
VSD *
Min.
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=5A, VGS=0V
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.01 - Rev.A




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QS8J5 mosfet

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