파트넘버.co.kr KUK7105-40AIE 데이터시트 PDF


KUK7105-40AIE 반도체 회로 부품 판매점

TrenchPLUS standard level FET



KEXIN 로고
KEXIN
KUK7105-40AIE 데이터시트, 핀배열, 회로
SMD Type
www.DataSheet4U.com
TransistIoCrs
TrenchPLUS standard level FET
KUK7105-40AIE
Features
Integrated temperature sensor
Electrostatic discharge protection
Q101 compliant
Standard level compatible.
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11Ggaattee
22Ddrraaiinn
33Ssoouurrccee
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Drain-gate voltage RGS = 20 K
Gate-source voltage
Drain current (DC) Tmb = 25 ,VGS = 10 V
Drain current (DC) Tmb = 100 ,VGS = 10 V
peak drain current *1
Total power dissipation Tmb = 25
gate-source clamping current (continuous)
gate-source clamping current *3
Storage & operating temperature
reverse drain current (DC) Tmb = 25
pulsed reverse drain current *1
non-repetitive avalanche energy *2
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
Symbol
VDS
VDGS
VGS
ID
ID
IDM
Ptot
IGS(CL)
Tstg, Tj
IDR
IDRM
EDS(AL)S
Rth j-mb
Rth j-a
Rating
40
40
20
155
75
620
272
10
50
-55 to 175
155
75
620
1.46
0.55
50
Unit
V
V
V
A
A
A
W
mA
mA
A
A
A
J
K/W
K/W
* 1 Tmb = 25 ; pulsed; tp 10 ìs;
*2 unclamped inductive load; ID = 75 A;VDS
*3 tp = 5 ms; = 0.01
40 V; VGS = 10 V; RGS = 50Ù;starting Tj = 25
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KUK7105-40AIE 데이터시트, 핀배열, 회로
SMD Type
www.DataSheet4U.com
TransistIoCrs
KUK7105-40AIE
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Zero gate voltage drain current
gate-source breakdown voltage
gate-source leakage current
drain-source on-state resistance
drain-Isense on-state resistance
ratio of drain current to sense current
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain (diode forward) voltage
reverse recovery time
recovered charge
Symbol
Testconditons
Min
ID = 0.25 mA; VGS = 0 V;Tj = 25
V(BR)DSS
ID = 0.25 mA; VGS = 0 V;Tj = -55
40
36
ID = 1 mA; VDS = VGS;Tj = 25
2
VGS(th) ID = 1 mA; VDS = VGS;Tj = 175
1
ID = 1 mA; VDS = VGS;Tj = -55
VDS = 40 V; VGS = 0 V;Tj = 25
IDSS
VDS = 40 V; VGS = 0 V;Tj = 175
V(BR)GSS IG = 1 mA;-55
Tj 175
20
IGSS
VGS = 10 V; VDS = 0 V;Tj = 25
VGS = 10 V; VDS = 0 V;Tj = 175
RDSon
VGS = 10 V; ID = 50 A;Tj = 25
VGS = 10 V; ID = 50 A;Tj = 175
.
VGS = 10 V; ID = 100 mA;Tj = 25
RD(Is)on
VGS = 10 V; ID = 100 mA;Tj = 175
0.98
1.86
ID/Isense VGS 10 V;-55
Tj 175
450
Qg(tot)
Qgs VGS = 10 V; VDD = 32 V;ID = 25 A
Qgd
Ciss
Coss VGS = 0 V; VDS = 25 V;f = 1 MHz
Crss
td(on)
tr
td(off)
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG =
10Ù
tf
Ld
measured from upper edge of drain
mounting base to center of die
Ls
measured from source lead to source
bond pad
VSD Is = 25A; VGS = 0 V
trr IS = 20 A; dIF/dt = -100 A/ìs;
Qr VGS = -10 V; VDS = 30 V
Typ Max
34
4.4
0.1 10
250
22
22 1000
10
4.5 5
9.5
1.08 1.18
2.05 2.24
500 550
120 127
19 22
50 60
4300 5000
1400 1670
820 1100
35
115
155
110
2.5
7.5
0.85 1.2
96
224
Unit
V
V
V
V
V
A
A
V
nA
A
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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KUK7105-40AIE mosfet

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KUK7105-40AIE

TrenchPLUS standard level FET - KEXIN