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FDS5672 반도체 회로 부품 판매점

N-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDS5672 데이터시트, 핀배열, 회로
www.DataSheet4U.com
July 2005
FDS5672
N-Channel PowerTrench® MOSFET
60V, 12A, 10m
Features
„ rDS(ON) = 10m, VGS = 10V, ID = 12A
„ rDS(ON) = 14m, VGS = 6V, ID = 10A
„ High performance trench technology for extremely low
rDS(ON)
„ Low gate charge
„ High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
„ DC/DC converters
Branding Dash
1
2
3
4
SO-8
5
54
63
72
81
©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
1
www.fairchildsemi.com


FDS5672 데이터시트, 핀배열, 회로
www.DataSheet4U.com
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25 oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TC = 25 oC, VGS = 6V, RθJA = 50oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 1)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case (Note 2)
Thermal Resistance Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance Junction to Ambient at 1000 seconds (Note 3)
Package Marking and Ordering Information
Device Marking
FDS5672
Device
FDS5672
Package
SO-8
Reel Size
330mm
Ratings
60
±20
12
10
Figure 4
245
2.5
20
-55 to 150
25
50
85
Units
V
V
A
A
mJ
W
mW/oC
oC
oC/W
oC/W
oC/W
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
60
-
-
-
- -V
-1
µA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 12A, VGS = 10V
ID = 10A, VGS = 6V,
ID = 12A, VGS = 10V,
TC = 150oC
2-4
- 0.0088 0.010
- 0.012 0.014
- 0.016 0.023
V
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V
ID = 12A
Ig = 1.0mA
-
-
-
-
-
-
-
-
-
2200
410
130
1.4
34
4.2
9.4
5.2
9.3
-
-
-
-
45
5.5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
2
www.fairchildsemi.com




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FDS5672 mosfet

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