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STU40N2LH5 반도체 회로 부품 판매점

N-channel Power MOSFET



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STMicroelectronics
STU40N2LH5 데이터시트, 핀배열, 회로
Features
www.DataSheet4U.com
STD40N2LH5
STU40N2LH5
N-channel 25 V, 0.01 , 40 A, DPAK, IPAK
STripFET™ V Power MOSFET
Preliminary Data
Type
STD40N2LH5
STU40N2LH5
VDSS
25 V
25 V
RDS(on) max
0.012
0.0126
ID
40 A
40 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in the standard
packages, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD40N2LH5
STU40N2LH5
Marking
40N2LH5
40N2LH5
Package
DPAK
IPAK
Packaging
Tape and reel
Tube
September 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
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STU40N2LH5 데이터시트, 핀배열, 회로
Electrical ratings
1 Electrical ratings
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Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (1)
PTOT
Drain-source voltage (VGS=0)
Gate-Source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
EAS (2) Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-case max
Tl Maximum lead temperature for soldering purpose
Value
25
± 22
40
28
160
35
0.23
TBD
-55 to 175
Value
4.3
100
275
Unit
V
V
A
A
A
W
W/°C
mJ
°C
Unit
°C/W
°C/W
°C
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STU40N2LH5 mosfet

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