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PDF STP14NM50N Data sheet ( Hoja de datos )
| Número de pieza | STP14NM50N | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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STB14NM50N, STD14NM50N
STF14NM50N, STP14NM50N
N-channel 500 V, 0.246 Ω, 12 A MDmesh™ II Power MOSFET
in DPAK, D2PAK, TO-220 and TO-220FP
Preliminary data
Features
Type
STB14NM50N
STD14NM50N
STF14NM50N
STP14NM50N
VDSS @
TJmax
RDS(on)
max
ID
550 V < 0.29 Ω 12 A
■ 100% avalanche tested
■ Low input capacitances and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This second generation of MDmesh™ technology,
applies the benefits of the multiple drain process
to STMicroelectronics’ well-known PowerMESH™
horizontal layout structure. The resulting product
offers improved on-resistance, low gate charge,
www.DataShhigeeht4dUv.c/domt capability and excellent avalanche
characteristics.
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STB14NM50N
STD14NM50N
STF14NM50N
STP14NM50N
Marking
14NM50N
Package
D2PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
December 2009
Doc ID 16832 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/15
www.st.com
15
1 page  
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 400 V, ID = 12 A,
RG =4.7 Ω, VGS = 10 V
(see Figure 4)
Min. Typ. Max Unit
15 ns
9 ns
--
12 ns
32 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 V/ns,
VDD = 400 V
(see Figure 7)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 V/ns,
VDD = 400 V, TJ = 150 °C
(see Figure 7)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
TBD
TBD
TBD
TBD
TBD
TBD
12
48
TBD
A
A
V
ns
nC
A
ns
nC
A
www.DataSheet4U.com
Doc ID 16832 Rev 2
5/15
5 Page 
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min Typ
A 4.40
b 0.61
b1 1.14
c 0.48
D 15.25
D1 1.27
E 10
e 2.40
e1 4.95
F 1.23
H1 6.20
J1 2.40
L 13
L1 3.50
L20 16.40
L30 28.90
∅P 3.75
Q 2.65
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
www.DataSheet4U.com
Doc ID 16832 Rev 2
0015988_Rev_S
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STP14NM50N.PDF ] | |
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