|
|
PDF FGA30N60LSD Data sheet ( Hoja de datos )
| Número de pieza | FGA30N60LSD | |
| Descripción | MOSFETs and bipolar transistors | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FGA30N60LSD (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
FGA30N60LSD
Features
• Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverters
• UPS, Welder
October 2008
tm
General Description
The FGA30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
www.DataSIChMee(1t)4U.com Pulsed Collector Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 25°C
@ TC = 100°C
PD Maximum Power Dissipation
@ TC = 25°C
Maximum Power Dissipation
@ TC = 100°C
TJ Operating Junction Temperature
Tstg Storage Temperature Range
TL Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA30N60LSD
600
± 20
60
30
90
150
480
192
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Typ.
--
--
--
Max.
0.26
0.92
40
Units
°C/W
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter
TC = 125oC
16
12
8
30A 60A
4
IC = 15A
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate Charge Characteristics
15
Common Emitter
IC = 30A
12 TC = 25oC
Vcc = 100V
20
9 300V
200V
6
3
0
0 50 100 150 200
www.DataSheet4U.com
Gate Charge, Qg [nC]
Figure 11. Load Current Vs. Frequency
250
80
Vcc = 400V
70 load Current : peak of square wave
60
50
40
30
20
Duty cycle : 50%
10 Tc = 100oC
Powe Dissipation = 192W
0
0.1 1 Freque1n0cy [kHz]
100
1000
Figure 8. Capacitance characteristics
13000
10000
Cies
1000
Coes
Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
100
50
0
5 10 15 20 25
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
300
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
50µs
100µs
10
1ms
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
DC Operation
0.1
0.1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-On Characteristics vs.
Gate Resistance
200
100
tr
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG [Ω]
50
FGA30N60LSD Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA30N60LSD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FGA30N60LSD | MOSFETs and bipolar transistors | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |