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PDF FDG410NZ Data sheet ( Hoja de datos )
| Número de pieza | FDG410NZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDG410NZ
Single N-Channel PowerTrench® MOSFET
20 V, 2.2 A, 70 mΩ
March 2009
Features
General Description
Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A
Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A
Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A
Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A
HBM ESD protection level > 2 kV (Note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Fast switching speed
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low rDS(on) and gate charge (Qg) in a small package.
Applications
DC/DC converter
Power management
Load switch
Low gate charge
RoHS Compliant
DS
D
D1
6D
G
D
D
D2
G3
5D
4S
www.DataSheet4U.com
SC70-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
2.2
6.0
0.42
0.38
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
300
333
°C/W
Device Marking
.41
Device
FDG410NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 333 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
5
www.fairchildsemi.com
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| PDF Descargar | [ Datasheet FDG410NZ.PDF ] | |
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