|
|
PDF FDG1024NZ Data sheet ( Hoja de datos )
| Número de pieza | FDG1024NZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDG1024NZ (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
August 2009
FDG1024NZ
Dual N-Channel PowerTrench® MOSFET
20 V, 1.2 A, 175 mΩ
Features
Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A
HBM ESD protection level >2 kV (Note 3)
Very low level gate drive requirements allowing operation in
3 V circuits (VGS(th) < 1.5 V)
Very small package outline SC70-6
RoHS Compliant
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as a
replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with
different bias resistor values.
S2
G2
D1
D2
G1
S1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
SC70-6
www.DataShMeeOt4SU.FcoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
1.2
6
0.36
0.30
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
350
415
°C/W
Device Marking
.24
Device
FDG1024NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 415 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
Figure 12. Transient Thermal Response Curve
100
1000
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDG1024NZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDG1024NZ | N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |