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FDD6778A 반도체 회로 부품 판매점

N-Channel MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD6778A 데이터시트, 핀배열, 회로
January 2009
FDD6778A
N-Channel PowerTrench® MOSFET
25 V, 14.0 m
Features
General Description
„ Max rDS(on) = 14.0 mat VGS = 10 V, ID = 10.0 A
„ Max rDS(on) = 30.0 mat VGS = 4.5 V, ID = 9.7 A
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
S
D
DTO-P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
10
30
12
50
12
24
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
6.2
40
°C/W
Device Marking
FDD6778A
Device
FDD6778A
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDD6778A Rev.C
1
www.fairchildsemi.com


FDD6778A 데이터시트, 핀배열, 회로
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
25
V
ID = 250 µA, referenced to 25 °C
17 mV/°C
VDS = 20 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 10.0 A
VGS = 4.5 V, ID = 9.7 A
VGS = 10 V, ID = 10.0 A, TJ = 150 °C
VDS = 5 V, ID = 10.0 A
1.0
1.9 3.0
V
-6 mV/°C
11.4
22.0
17.2
33
14
30.0
21.2
m
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
652 870
142 190
129 195
0.8
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 10.0 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 13 V,
ID = 10.0 A
6 12
3 10
14 26
2 10
12 17
7 10
2.0
2.8
ns
ns
ns
ns
nC
nC
nC
nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3.1 A
VGS = 0 V, IS = 10.0 A
(Note 2)
(Note 2)
IF = 10.0 A, di/dt = 100 A/µs
0.9 1.3
0.8 1.2
14 26
3 10
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 12 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 5 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 12 A.
©2009 Fairchild Semiconductor Corporation
FDD6778A Rev.C
2
www.fairchildsemi.com




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FDD6778A mosfet

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N-Channel MOSFET - Fairchild Semiconductor