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FQP45N15V2 반도체 회로 부품 판매점

150V N-Channel MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FQP45N15V2 데이터시트, 핀배열, 회로
FQP45N15V2/FQPF45N15V2
150V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 45A, 150V, RDS(on) = 0.04@VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
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GDS
TO-220
FQP
GD S
TO-220F
FQPF
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◀▲
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S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
www.DataSheet4U.com
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP45N15V2 FQPF45N15V2
150
45 45 *
31 31 *
180 180 *
± 30
1124
45
22
4.5
220 66
1.47 0.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP45N15V2
0.68
0.5
62.5
FQPF45N15V2
2.25
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004


FQP45N15V2 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
150 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.21
IDSS
Zero Gate Voltage Drain Current
VDS = 150 V, VGS = 0 V
VDS = 120 V, TC = 150°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 22.5 A
-- 0.034 0.04
VDS = 40 V, ID = 22.5 A (Note 4) --
40
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2330 3030
-- 510 670
-- 135 176
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 75 V, ID = 45 A,
RG = 25
-- 22
54
-- 232 474
-- 224 458
(Note 4, 5)
--
246
502
VDS = 120 V, ID = 45 A,
VGS = 10 V
(Note 4, 5)
--
--
--
72
13
31
94
--
--
ns
ns
ns
ns
nC
nC
nC
www.DataSheet4UDI.Scroamin-SoMuarxcime uDmioCdonetinCuhouasraDcratien-rSisoutircces
and
Diode
Maximum Ratings
Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 45 A
trr Reverse Recovery Time
VGS = 0 V, IS = 45 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.74mH, IAS = 45A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 45A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
--
--
--
176
1.19
45
180
1.4
--
--
A
A
V
ns
µC
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004




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FQP45N15V2 mosfet

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FQP45N15V2

150V N-Channel MOSFET - Fairchild Semiconductor