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PDF STP12N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STP12N65M5 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD12N65M5, STF12N65M5
STP12N65M5, STU12N65M5
N-channel 650 V, 0.370 Ω, 8.5 A MDmesh™ V Power MOSFET
DPAK, TO-220FP, TO-220, IPAK
Preliminary Data
Features
Type
STD12N65M5
STF12N65M5
STP12N65M5
STU12N65M5
VDSS @ RDS(on)
TJmax
max
ID
PW
710 V
8.5 A
8.5 A(1)
< 0.41 Ω
8.5 A
70 W
25 W
70 W
8.5 A 70 W
1. Limited only by maximum temperature allowed
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% Avalanche tested
Application
■ Switching applications
Description
MDmesh V is a revolutionary Power MOSFET
technology, which combines an innovative
proprietary vertical process with the well known
company’s PowerMESH™ horizontal layout. The
resulting product has an extremely low on-
resistance, unmatched among silicon-based
Power MOSFETs, making it especially suited for
applications which require superior power density
and outstanding efficiencies.
Table 1. Device summary
Order codes
Marking
STD12N65M5
STF12N65M5
STP12N65M5
STU12N65M5
12N65M5
12N65M5
12N65M5
12N65M5
IPAK
3
2
1
3
1
DPAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2009
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
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Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 400 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 4)
Min. Typ. Max Unit
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 8.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 7)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 7)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
8.5 A
34 A
1.5 V
TBD
TBD
TBD
ns
nC
A
TBD
TBD
TBD
ns
nC
A
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Dim
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Package mechanical data
TO-220 mechanical data
Min
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ
1.27
16.40
28.90
Max
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
Min
0.173
0.024
0.044
0.019
0.6
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
Typ
0.050
0.645
1.137
Max
0.181
0.034
0.066
0.027
0.62
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
11/14
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| PDF Descargar | [ Datasheet STP12N65M5.PDF ] | |
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