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IRFP240 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



Vishay Siliconix 로고
Vishay Siliconix
IRFP240 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Power MOSFET
IRFP240, SiHFP240
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
70
13
39
Single
0.18
TO-247
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-247
IRFP240PbF
SiHFP240-E3
IRFP240
SiHFP240
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 1.9 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c. ISD 18 A, dI/dt 150 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
200
± 20
20
12
80
1.2
510
20
15
150
5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91210
S-Pending-Rev. A, 24-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1


IRFP240 데이터시트, 핀배열, 회로
IRFP240, SiHFP240
www.DVaitasShheaeyt4US.coilmiconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.83
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 12 Ab
VDS = 50 V, ID = 12 Ab
200 -
-V
- 0.29 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
-
-
0.18
Ω
6.9 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 18 A, VDS = 160 V,
see fig. 6 and 13b
VDD = 100 V, ID = 18 A,
RG = 9.1 Ω, RD = 5.4 Ω,
see fig. 10b
-
-
-
-
-
-
-
-
-
-
1300
400
130
-
-
-
14
51
45
36
-
-
-
70
13
39
-
-
-
-
pF
nC
ns
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
- 5.0 -
nH
- 13 -
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 20
A
- - 80
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 20 A, VGS = 0 Vb
- - 2.0 V
trr
- 300 610 ns
TJ = 25 °C, IF = 18 A, dI/dt = 100 A/µsb
Qrr - 3.4 7.1 µC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91210
S-Pending-Rev. A, 24-Jun-08




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IRFP240 mosfet

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