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KEXIN |
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SMD Type
Dual N-Channel 80-V (D-S) MOSFET
KI4980DY
Features
ICIC
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150 )*
TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conduction) *
Maximum Power Dissipation *
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
* Surface Mounted on FR4 Board, t 10 sec.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
RthJA
Rating
80
20
3.7
2.9
30
1.7
2.0
1.3
-55 to 150
62.5
Unit
V
A
A
W
/W
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www.DataSheet4U.com
SMD Type
ICIC
KI4980DY
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current *
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Symbol
Testconditons
VGS(th) VDS = VGS, ID = 250 ìA
IGSS VDS = 0 V, VGS = 20 V
VDS = 80 V, VGS = 0 V
IDSS
VDS = 80 V, VGS = 0 V, TJ = 55
ID(on) VDS = 5 V, VGS = 10 V
VGS = 10 V, ID =3.7 A
rDS(on)
VGS = 6.0 V, ID = 3.2 A
gfs VDS = 15 V, ID = 3.7 A
VSD IS = 1.7 A, VGS = 0 V
Qg
Qgs VDS = 40 V, VGS = 10V, ID = 3.7 A
Qgd
Rg
td(on)
tr VDD = 40 V, RL = 40
td(off) ID = 1 A, VGEN = 10 V, RG = 6 Ù
tf
trr IF = 1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2 %.
Min Typ Max Unit
2V
100 nA
1
A
20
20 A
0.062 0.075
0.071 0.095
12 S
1.2 V
15 30 nC
4 nC
3.2 nC
5.1
10 20 ns
10 20 ns
30 60 ns
10 20 ns
75 110 ns
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