KI4953DY 반도체 회로 부품 판매점
MOSFET ( Transistor )
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 KEXIN |
www.DataSheet4U.com
SMD Type
Dual P-Channel 30-V(D-S) MOSFET
KI4953DY
ICIC
Features
100% Rg Tested
1: Source 1
2: Gate 1
7,8: Drain 1
3: Source 2
4: Gate 2
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA = 25
Continuous Drain Current (TJ = 150 ) *
TA = 70
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
* Surface Mounted on 1" X 1' FR4 Board.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
RthJA
Rating
-30
20
-4.9
-3.9
-30
-1.7
2
1.3
-55 to 150
62.5
Unit
V
A
W
/W
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www.DataSheet4U.com
SMD Type
ICIC
KI4953DY
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current*
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Symbol
Testconditons
VGS(th) VDS = VGS, ID = -250 A
IGSS VDS = 0 V, VGS = 20 V
VDS = -30V, VGS = 0 V
IDSS
VDS = -30V, VGS = 0 V, TJ = 55
ID(on) VDS - 5 V, VGS = -10 V
VGS = -10 V, ID = -4.9A
rDS(on)
VGS = -4.5 V, ID = -3.6A
gfs VDS = -15 V, ID = -4.9A
VSD IS = -1.7 A, VGS = 0 V
Qg
Qgs VDS = -15V, VGS = -10 V, ID = -4.9A
Qgd
Rg
td(on)
tr VDD = -15 V, RL = 15
td(off) ID = -1 A, VGEN = -10V, RG = 6
tf
trr IF = -1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
Min Typ Max Unit
-1 V
100 nA
-1 A
-25 A
-20 A
0.043 0.053
0.070 0.095
10 S
0.8 -1.2 V
16 25 nC
5 nC
2 nC
2 7.1
9 15 ns
13 20 ns
25 40 ns
15 25 ns
60 90 ns
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KI4953DY mosfet
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