KI4542DY 반도체 회로 부품 판매점
MOSFET ( Transistor )
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SMD Type
TransistIoCrs
30V Complementary PowerTrench MOSFET
KI4542DY
Features
N-Channel
6 A, 30 V RDS(ON) = 28m @ VGS = 10V
RDS(ON) = 35m @ VGS =4.5V
P-Channel
-6 A, -30 V RDS(ON) = 32m @ VGS =- 10 V
RDS(ON) = 45m @ VGS =-4.5V
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JA
R JC
N-Channel
P- Channel
30 -30
20 20
6 -6
20 -20
2
1.6
1.2
1
-55 to 175
78
40
Unit
V
V
A
A
W
W
/W
/W
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www.DataSheet4U.com
SMD Type
TransistIoCrs
KI4542DY
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Symbol
Testconditons
VGS = 0 V, ID = 250 A
BVDSS
VGS = 0 V, ID = -250 A
ID = 250 A, Referenced to 25
ID = -250 A, Referenced to 25
IDSS
VDS = 24V, VGS = 0 V
VDS = -24 V, VGS = 0 V
IGSS
VGS(th)
VGS = 20V, VDS = 0 V
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
ID = 250 A, Referenced to 25
ID = -250 A, Referenced to 25
VGS = 10 V, ID =6A
RDS(on) VGS = 10 V, ID =6A,TJ=125
VGS = 4.5 V, ID = 5A
VGS = -10 V, ID =-6 A
RDS(on) VGS = -10 V, ID =-5 A,TJ=125
ID(on)
VGS = -4.5 V, ID =-5A
VGS = 10 V, VDS = 5V
VGS = -10 V, VDS = -5V
VDS = 15V, ID = 6A
gFS
VDS = -10V, ID = -6A
N-Channel
Ciss
VDS = 15 V, VGS = 0 V,f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
P-Channel
VDS = -15 V, VGS = 0 V,f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
td(on)
tr
N-Channel
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
(Note 2)
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
P-Channel
VDD = -15 V, ID = -1 A,
VGS = -10 V, RGEN = 6
(Note 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
Qg
VDS =15V,ID=7.5A,VGS=5V(Note 2)
Qgs
P-Channel
VDS=-10V,ID=-6A,VGS=-5V(Note 2)
Qgd
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
30
V
-30
23
mV/
-21
1
A
-1
100 nA
100
1 1.5 3
-1 -1.7 -3
V
-4
mV/
4
19 28
32 48
25 35
m
21 32
29 51
30 45
20
A
-20
18
S
16
830
1540
pF
185
pF
400
80
pF
170
6 12
ns
13 24
10 18
ns
22 35
18 29
ns
47 75
5 12
ns
18 30
9 13
nC
15 20
2.8
nC
4
3.1
nC
5
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KI4542DY mosfet
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