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KI4330DY 반도체 회로 부품 판매점

MOSFET ( Transistor )



KEXIN 로고
KEXIN
KI4330DY 데이터시트, 핀배열, 회로
www.DataSheet4U.com
SMD Type
Dual N-Channel 30-V (D-S) MOSFET
KI4330DY
ICIC
Features
TrenchFET Power MOSFETS
100 % Rg Tested
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conductio*n)
Maximum Power Dissipation
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient*
t 10 sec
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
* Surface Mounted on 1" x 1" FR4 Board.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Symbol
RthJA
RthJF
10 secs
Steady State
30
20
8.7 6.6
7.0 5.3
30
1.7 0.9
2.0 1.1
1.3 0.7
-55 to 150
Typical
Maximum
45 62.5
85 110
26 35
Unit
V
A
A
W
/W
www.kexin.com.cn 1


KI4330DY 데이터시트, 핀배열, 회로
www.DataSheet4U.com
SMD Type
ICIC
KI4330DY
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current *
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Symbol
Testconditons
VGS(th) VDS = VGS, ID = 250 ìA
IGSS VDS = 0 V, VGS = 20 V
VDS = 30 V, VGS = 0 V
IDSS
VDS = 30 V, VGS = 0 V, TJ = 55
ID(on) VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 8.7 A
rDS(on)
VGS = 4.5 V, ID = 7.5 A
gfs VDS = 15 V, ID = 8.7 A
VSD IS = 1.7 A, VGS = 0 V
Qg
Qgs VDS = 15 V, VGS = 4.5 V, ID = 8.7 A
Qgd
Rg
td(on)
tr VDD = 15 V, RL = 15 Ù
td(off) ID = 1 A, VGEN = 10 V, RG = 6 Ù
tf
trr IF = 1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2 %.
Min Typ Max Unit
1 3V
100 nA
1
A
5
30 A
0.013 0.0165
0.018 0.022
28 S
0.8 1.2 V
13 nC
7.1 nC
3.5 nC
1 1.7
10 15 ns
10 15 ns
40 60 ns
12 20 ns
45 70 ns
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KI4330DY mosfet

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