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AP01N60H 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Advanced Power Electronics 로고
Advanced Power Electronics
AP01N60H 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP01N60H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
RoHS Compliant
G
D
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP01N60J) is available for low-profile
applications.
BVDSS
RDS(ON)
ID
600V
8Ω
1.6A
G D S TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
600
±30
1.6
1
6
39
0.31
13
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Max.
Max.
Value
3.2
110
Units
/W
/W
200705052-1/4


AP01N60H 데이터시트, 핀배열, 회로
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.8A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=50V, ID=0.8A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=1.6A
VDS=480V
VGS=10V
VDD=300V
ID=1.6A
RG=10Ω,VGS=10V
RD=187.5Ω
VGS=0V
VDS=25V
f=1.0MHz
600 - - V
- 0.6 - V/
- 7.2 8 Ω
2 - 4V
- 0.8 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 7.7 - nC
- 1.5 - nC
- 2.6 - nC
- 8 - ns
- 5 - ns
- 14 - ns
- 7 - ns
- 286 - pF
- 25 - pF
- 5 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=1.6A, VGS=0V
Min. Typ. Max. Units
- - 1.6 A
- - 6A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse width <300us , duty cycle <2%.
2/4




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AP01N60H mosfet

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