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PDF M02N60B Data sheet ( Hoja de datos )
| Número de pieza | M02N60B | |
| Descripción | N Channel MOSFET | |
| Fabricantes | Stanson Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de M02N60B (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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N Chwawnw.nDaetlaShMeetO4US.cFomET
2.0A
M02N60B
PIN CONFIGURATION
123
1.Gate 2.Drain 3.Source
ABSOLUTE MAXIMUM RATINGS
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge
Circurits
IDSS and VDS(on) Specified at Elevated
Temperature
RATING
SYMBOL VALUE UNIT
Drain to Current - Continuous
- Pulsed
ID 2.0 A
IDM 9.0
Gate-to-Source Voltage – Continue
- Non-repetitive
VGS
VGSM
+/-20
+/-40
V
V
Total Power Dissipation
TO-251/252
TO-220
Operating and Storage Temperature Range
PD
TJ, TSTG
60
60
-55 to 150
W
Single Pulse Drain-to-Source Avalanche Energy – Tj = 25
(VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25
Thermal Resistance – Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds
EAS
JA
TL
20 mJ
1.0 /W
62.5
260
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Page 1
1 page  
N Chwawnw.nDeatlaShMeetO4US.cFomET
2.0A
M02N60B
TO-220-3L PACKAGE OUTLINE DIMENSIONS
SAMBOL
A
A1
B
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
DIMENSIONS IN MILLIMETERS
MIN
4.470
2.520
0.710
1.170
1.170
0.310
1.170
10.01
8.500
12.06
2.540 TYP
4.980
2.590
13.40
3.560
MAX
4.670
2.820
0.910
0.910
1.370
0.530
1.370
10.31
8.900
12.46
5.180
2.890
13.80
3.960
3.790
3.890
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
(6 0) 9389294 A (6 0) 938929
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet M02N60B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| M02N60 | N Channel MOSFET | Stanson Technology |
| M02N60B | N Channel MOSFET | Stanson Technology |
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