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PDF STU3N62K3 Data sheet ( Hoja de datos )
| Número de pieza | STU3N62K3 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB3N62K3, STD3N62K3, STF3N62K3
STP3N62K3, STU3N62K3
N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET
D2PAK, DPAK, TO-220FP, TO-220, IPAK
Features
www.DataSheet4U.com Type
VDSS
RDS(on)
max
ID
Pw
STB3N62K3
STD3N62K3
STF3N62K3
STP3N62K3
STU3N62K3
620 V
620 V
620 V
620 V
620 V
< 2.5 Ω
< 2.5 Ω
< 2.5 Ω
< 2.5 Ω
< 2.5 Ω
2.7 A
2.7 A
2.7 A(1)
2.7 A
2.7 A
45 W
45 W
20 W
45 W
45 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
IPAK
3
2
1
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Application
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
Table 1. Device summary
Order codes
Marking
STB3N62K3
STD3N62K3
STF3N62K3
STP3N62K3
STU3N62K3
6N62K3
6N62K3
6N62K3
6N62K3
6N62K3
Package
D²PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tape and reel
Tube
Tube
Tube
July 2008
Rev 1
1/19
www.st.com
19
1 page  
STB/D/F/P/U3N62K3
Electrical characteristics
www.DataSheet4U.com
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 2.7 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.7 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.7 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2.7
10.8
1.6
190
825
9
255
1100
10
A
A
V
ns
nC
A
ns
nC
A
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min Typ Max Unit
BVGSO(1)
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/19
5 Page 
STB/D/F/P/U3N62K3
Package mechanical data
www.DataSheet4U.com
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
L30 28.90
0.645
1.137
∅P 3.75
Q 2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/19
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| PDF Descargar | [ Datasheet STU3N62K3.PDF ] | |
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