|
|
PDF STP6NC80Z Data sheet ( Hoja de datos )
| Número de pieza | STP6NC80Z | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STP6NC80Z (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
STP6NC80Z - STP6NC80ZFP
STB6NC80Z - STB6NC80Z-1
N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP6NC80Z/FP
www.DataSheet4U.cSoTmB6NC80Z/-1
800V
800V
< 1.8 Ω
< 1.8 Ω
5.4 A
5.4 A
s TYPICAL RDS(on) = 1.5 Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-220
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
(Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (q)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
December 2002
Value
Unit
STP(B)6NC80Z(-1) STP6NC80ZFP
800 V
800 V
± 25 V
5.4
5.4(*)
A
3.4
3.4(*)
A
21
21(*)
A
125 40 W
1 0.32 W/°C
±50 mA
3 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(1)ISD ≤5.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
.(*)Pulse width Limited by maximum temperature allowed 1/13
1 page  
Transconductance
STP6NC80Z/FP/STP6NC80Z-1
Static Drain-source On Resistance
www.DataSheet4U.com
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
5 Page 
STP6NC80Z/FP/STP6NC80Z-1
www.DataSheet4U.com
DIM.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
TO-263 (D2PAK) MECHANICAL DATA
MIN.
4.4
2.49
0.7
1.14
0.45
1.21
8.95
10
4.88
15
1.27
1.4
mm
TYP.
MAX.
4.6
2.69
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
MIN.
0.173
0.098
0.027
0.044
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.624
0.055
0.068
A
C2
E
D
DET AIL "A"
C
A1
B2
DET AIL "A"
B
G
L2 L L3
P011P6/E
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STP6NC80Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STP6NC80Z | N-CHANNEL Power MOSFET |  ST Microelectronics |
| STP6NC80Z | N-CHANNEL MOSFET | STMicroelectronics |
| STP6NC80ZFP | N-CHANNEL MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |