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Número de pieza | FW340 | |
Descripción | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FW340 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number : ENA0424
FW340
SANYO Semiconductors
DATA SHEET
FW340
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
www.DataSheet4U• .cFomor motor drives, inverters.
• Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
• High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
Total Dissipation
Channel Temperature
Storage Temperature
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Duty cycle≤1%
Duty cycle≤1%
Duty cycle≤1%
Mounted on a ceramic board
(2000mm2!0.8mm)1unit, PW≤10s
Mounted on a ceramic board
(2000mm2!0.8mm), PW≤10s
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W340
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=3A, VGS=4.5V
ID=3A, VGS=4V
N-channel
30
±20
5
5.5
7
20
P-channel
--30
±20
--5
--5.5
--9
--20
1.8
Unit
V
V
A
A
A
A
W
2.2
150
--55 to +150
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
1.2 2.6 V
3.3 5.5
S
37 48 mΩ
56 78 mΩ
64 90 mΩ
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006PA MS IM TB-00002412 No. A0424-1/6
1 page RDS(on) -- VGS
140
ID= --5A
120
ID= --3A
100
FW340
[Pch]
Ta=25°C
80
60
40
20
0
0
www.DataSheet4U.com
--2 --4 --6 --8 --10 --12
Gate-to-Source Voltage, VGS -- V
yfs -- ID
10
7 VDS= --10V
5
--14 --16
IT07392
[Pch]
3
2
Ta=
--25°C
75°C
1.0
7 25°C
5
3
2
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
IT11094
SW Time -- ID
[Pch]
3
VDD= --15V
2 VGS= --10V
td(off)
100
7
5 tf
3
2 tr
10
td(on)
7
5
3
--0.1
23
--10
VDS= --10V
--9 ID= --5A
--8
5 7 --1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 --10
IT07396
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 2 4 6 8 10 12 14 16 18
Total Gate Charge, Qg -- nC
IT07398
RDS(on) -- Ta
[Pch]
140
120
100
80
60
40
I DIID=D==---3---3A5A,AV, ,VGVGSG=SS=-=--4--4V-1.50VV
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07393
IS -- VSD
[Pch]
--10
7 VGS=0V
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2
3
2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
--1.2
IT07395
[Pch]
f=1MHz
1000
7
5
Ciss
3
2 Coss
100 Crss
7
5
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT07397
ASO
[Pch]
5
3 IDP= --20A
2
--10
7 ID= --5A
5
3
2
--1.0
PW≤10µs
1ms 100µs
10ms
100ms
7
5
3 Operation in this area
2 is limited by RDS(on).
--0.1
DC
10s
operation
7
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (2000mm2!0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS -- V IT11095
No. A0424-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FW340.PDF ] |
Número de pieza | Descripción | Fabricantes |
FW340 | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device | Sanyo Semicon Device |
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