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PDF SUB85N02-03 Data sheet ( Hoja de datos )

Número de pieza SUB85N02-03
Descripción N-channel 20-V (D-S) 175C MOSFET
Fabricantes Vishay Intertechnology 
Logotipo Vishay Intertechnology Logotipo



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New Product
SUP/SUB85N02-03
Vishay Siliconix
N-Channel 20-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
0.003 @ VGS = 4.5 V
20 0.0034 @ VGS = 2.5 V
0.0038 @ VGS = 1.8 V
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TO-220AB
ID (A)a
85
85
85
TO-263
D
DRAIN connected to TAB
GD S
Top View
SUP85N02-03
G DS
Top View
SUB85N02-03
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
20
"8
85
85
240
30
45
250
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)c
Free Air (TO-220AB)
Notes:
a. See SOA curve for voltage derating.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71421
S-03181—Rev. A, 05-Mar-01
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
www.vishay.com
1

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SUB85N02-03 pdf
New Product
SUP/SUB85N02-03
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
100
80
60
40
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20
1000
100
10
1
Safe Operating Area
Limited
by rDS(on)
TC = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0 25 50 75 100 125 150 175
TC Case Temperature (_C)
0.1
0.1
1 10
VDS Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
100
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 71421
S-03181Rev. A, 05-Mar-01
www.vishay.com
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