파트넘버.co.kr GM2308 데이터시트 PDF


GM2308 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



GTM 로고
GTM
GM2308 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/20
REVISED DATE :
GM2308
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
60V
160m
3A
Description
The GM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GM2308 is universally used for all commercial-industrial surface mount applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5°TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Ratings
60
±20
3.0
2.3
10
1.5
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
Value
83.3
Unit
/W
GM2308
Page: 1/4


GM2308 데이터시트, 핀배열, 회로
www.DataSheet4U.com
ISSUED DATE :2006/01/20
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
60
-
1.0
-
-
-
0.05
-
5.0
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=5V, ID=3A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 10 uA VDS=60V, VGS=0
- 25 uA VDS=48V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 160 m VGS=10V, ID=2.0A
- 220
VGS=4.5V, ID=1.7A
6 10
ID=3A
1.6 - nC VDS=48V
3-
VGS=4.5V
6-
VDS=30V
5-
ID=1A
16
-
ns VGS=10V
RG=3.3
3-
RD=30
490 780
55 -
40 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
25
26
Max.
1.2
-
-
Unit Test Conditions
V IS=1.2A, VGS=0V
ns IS=3A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
GM2308
Page: 2/4




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GM2308 mosfet

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