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GE9973 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



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GE9973 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/30
REVISED DATE :
GE9973
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
60V
80m
14A
Description
The GE9973 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low Gate Charge
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
b
c
D
E
L4
L5
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
14.7 15.3
6.20 6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
2.60 2.89
3.71 3.96
2.60 2.80
Ratings
60
20
14
9
40
27
0.22
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4.5
62
Unit
/W
/W
GE9973
Page: 1/4


GE9973 데이터시트, 핀배열, 회로
ISSUED DATE :2005/08/30
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
60
-
1.0
-
-
-
0.05
-
8.6
-
- V VGS=0, ID=250uA
- V/ Reference to 25 , ID=1mA
3.0 V VDS=VGS, ID=250uA
- S VDS=10V, ID=9A
100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=60V, VGS=0
- 25 uA VDS=48V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 80 m VGS=10V, ID=9A
- 100
VGS=4.5V, ID=6A
8 13
ID=9A
3 - nC VDS=48V
4-
VGS=4.5V
7-
VDS=30V
15 -
ID=9A
16
-
ns VGS=10V
RG=3.3
3-
RD=3.3
720 1150
77 -
45 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
28
27
Max.
1.2
-
-
Unit Test Conditions
V IS=14A, VGS=0V
ns IS=9A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
GE9973
Page: 2/4




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