파트넘버.co.kr GC2307 데이터시트 PDF


GC2307 반도체 회로 부품 판매점

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



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GTM
GC2307 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Pb Free Plating Product
CORPORATION ISSUED DATE :2005/06/20
REVISED DATE :
GC2307
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-16V
60m
-4.0A
Description
The GC2307 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GC2307 is universally preferred for all commercial-industrial applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Fast Switching
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
-16
±8
-4.0
-3.3
-12
1.38
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Ratings
90
Unit
/W
1/4


GC2307 데이터시트, 핀배열, 회로
CORPORATION ISSUED DATE :2005/06/20
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
IDSS
-16
-
-
-
-
-
-
-
-0.01
-
12
-
-
-
-
-
-1.0
-
±100
-1
-25
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-5V, ID=-4A
nA VGS= ±8V
uA VDS=-16V, VGS=0
uA VDS=-12V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 60
VGS=-4.5V, ID=-4A
- 70 m VGS=-2.5V, ID=-3.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
- - 90
VGS=-1.8V, ID=-2.0A
- 15 24
ID=-4A
- 1.3 - nC VDS=-12V
-4-
VGS=-4.5V
-8-
VDS=-10V
- 11 -
ID=-1A
-
54
-
ns VGS=-10V
RG=3.3
- 36 -
RD=10
- 985 1580
VGS=0V
- 180 -
pF VDS=-15V
- 160 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
39
26
Max.
-1.2
-
-
Unit Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-4A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2/4




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GC2307 mosfet

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