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GJ55N03 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



GTM 로고
GTM
GJ55N03 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/08/16
REVISED DATE :
GJ55N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
6m
55A
Description
The GJ55N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAS
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
25
±20
55
35
215
62.5
0.5
240
31
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Value
2.0
110
Unit
/W
/W
GJ55N03
Page: 1/4


GJ55N03 데이터시트, 핀배열, 회로
ISSUED DATE :2006/08/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
25
-
1.0
-
-
-
0.037
-
30
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=28A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=25V, VGS=0
- 25 uA VDS=20V, VGS=0
Static Drain-Source On-Resistance3 RDS(ON)
-
-
4.5
7
6
9
Total Gate Charge3
Qg - 16.8 -
Gate-Source Charge
Qgs - 6.0 -
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Qgd
Td(on)
- 4.9 -
- 15.1 -
Rise Time
Tr - 4 -
Turn-off Delay Time
Td(off)
- 45.2 -
Fall Time
Tf - 7.6 -
Input Capacitance
Ciss - 2326 -
Output Capacitance
Coss
- 331 -
Reverse Transfer Capacitance
Crss - 174 -
m VGS=10V, ID=30A
VGS=4.5V, ID=30A
ID=28A
nC VDS=20V
VGS=5V
VDS=15V
ID=28A
ns VGS=10V
RG=3.3
RD=0.53
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.5
55
Unit Test Conditions
V IS=20A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.5V
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=20V, L=0.1mH, RG=25 , IAS=10A.
3. Pulse width 300us, duty cycle 2%.
GJ55N03
Page: 2/4




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