GJ3055S 반도체 회로 부품 판매점
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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 GTM |
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Pb Free Plating Product
ISSUED DATE :2006/05/19
REVISED DATE :2006/11/09B
GJ3055S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
25m
18A
Description
The GJ3055S provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VGS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
20
±8
18
10
30
28
0.22
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4.5
110
Unit
/W
/W
GJ3055S
Page: 1/5
ISSUED DATE :2006/05/19
REVISED DATE :2006/11/09B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
20
-
0.5
-
-
-
0.037
-
7
-
-
-
1.2
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=6A
nA VGS= ±8V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 25 uA VDS=16V, VGS=0
- - 25
VGS=10V, ID=8A
Static Drain-Source On-Resistance RDS(ON)
-
- 30 m VGS=4.5V, ID=6A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
- - 40
VGS=2.5V, ID=5.2A
- 18.9 -
- 2.1 -
- 2.4 -
ID=6A
nC VDS=10V
VGS=10V
- 14.3 -
- 11.9 -
- 22.1 -
- 16.7 -
VDS=10V
ID=1A
ns VGS=4.5V
RG=6
RL=10
- 614 -
- 151 -
- 116 -
VGS=0V
pF VDS=8V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
18
30
Unit Test Conditions
V IS=18A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ3055S
Page: 2/5
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GJ3055S mosfet
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관련 데이터시트
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N-Channel Enhancement Mode Power MOSFET - GTM
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM