파트넘버.co.kr GI494 데이터시트 PDF


GI494 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



GTM 로고
GTM
GI494 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/07
REVISED DATE :
GI494
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
11m
55A
Description
The GI494 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The through-hole version (TO-251) is available for low-profile applications and suited for use as a high side
switch in SMPS and general purpose applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
±12
55
39
120
63
0.42
-55 ~ +175
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
2.4
50
Unit
/W
/W
GI494
Page: 1/4


GI494 데이터시트, 핀배열, 회로
ISSUED DATE :2006/12/07
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
VGS(th)
gfs
IGSS
30
1.0
-
-
- - V VGS=0, ID=250uA
- 2.5 V VDS=VGS, ID=250uA
40 -
S VDS=5V, ID=20A
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 11 m VGS=10V, ID=20A
- 13.5
VGS=4.5V, ID=20A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 22 28
ID=20A
Qgs - 3.7 - nC VDS=15V
Qgd - 2.7 -
VGS=10V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 10
- 6.3
- 21
- 2.8
-
-
-
-
VDS=15V
ns
VGS=10V
RG=3
RL=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1210 1452
VGS=0V
- 330 -
pF VDS=15V
- 85 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
IS
Trr
Qrr
Min.
-
-
-
-
Typ.
-
-
36
47
Max.
1.0
55
-
-
Unit Test Conditions
V IS=1A, VGS=0V
A VD= VG=0V, VS=1.0V
ns IS=20A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GI494
Page: 2/4




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N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM