파트넘버.co.kr GI3055 데이터시트 PDF


GI3055 반도체 회로 부품 판매점

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



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GI3055 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/05/12
REVISED DATE :2007/01/25C
GI3055
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
26m
15A
Description
The GI3055 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VGS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
±20
15
9
50
28
0.22
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
4.8
110
Unit
/W
/W
GI3055
Page: 1/5


GI3055 데이터시트, 핀배열, 회로
ISSUED DATE :2006/05/12
REVISED DATE :2007/01/25C
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.037
-
4
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=6A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
- 26 m VGS=10V, ID=8A
- 40
VGS=4.5V, ID=6A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 4.6 -
ID=8A
Qgs - 1.1 - nC VDS=24V
Qgd - 3 -
VGS=5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 4.9 -
- 22.5 -
- 12.2 -
- 3.3 -
VDS=15V
ID=8A
ns VGS=10V
RG=3.4
RD=1.9
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 160 -
- 107 -
- 32 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
15
50
Unit Test Conditions
V IS=15A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GI3055
Page: 2/5




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