파트넘버.co.kr IRL2203NPBF 데이터시트 PDF


IRL2203NPBF 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRL2203NPBF 데이터시트, 핀배열, 회로
www.DataSheet4U.com
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 94953
IRL2203NPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 7.0m
ID = 116A‡
S
TO-220AB
Max.
116‡
82
400
180
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.85
–––
62
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
01/29/04


IRL2203NPBF 데이터시트, 핀배열, 회로
IRL2203NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
EAS Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
30 ––– ––– V
––– 0.029 ––– V/°C
–––
–––
––– 7.0
––– 10
m
1.0 ––– ––– V
73 ––– ––– S
––– ––– 25
––– ––– 250
µA
–––
–––
––– 100
––– -100
nA
––– ––– 60
––– ––– 14 nC
––– ––– 33
––– 11 –––
––– 160 –––
––– 23 –––
––– 66 –––
––– 4.5 –––
––– 7.5 –––
nH
––– 3290 –––
––– 1270 –––
––– 170 –––
––– 1320…290†
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 60A „
VGS = 4.5V, ID = 48A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 60A„
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
ID = 60A
VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
VDD = 15V
ID = 60A
RG = 1.8
VGS = 4.5V, See Fig. 10 „
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 60A, L = 0.16mH
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 116‡
––– ––– 400
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.2 V TJ = 25°C, IS = 60A, VGS = 0V „
––– 56 84 ns TJ = 25°C, IF = 60A
––– 110 170 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD 60A, di/dt 110A/µs, VDD V(BR)DSS,
TJ 175°C
‚ Starting TJ = 25°C, L = 0.16mH
„ Pulse width 400µs; duty cycle 2%.
RG = 25, IAS = 60A, VGS=10V (See Figure 12) … This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
2 www.irf.com




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: International Rectifier

( ir )

IRL2203NPBF mosfet

데이터시트 다운로드
:

[ IRL2203NPBF.PDF ]

[ IRL2203NPBF 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


IRL2203NPBF

Power MOSFET ( Transistor ) - International Rectifier