|
|
PDF BF1208 Data sheet ( Hoja de datos )
| Número de pieza | BF1208 | |
| Descripción | Dual N-channel dual gate MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BF1208 (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
BF1208
Dual N-channel dual gate MOSFET
Rev. 01 — 16 March 2005
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
s Internal switch to save external components
s Superior cross-modulation performance during AGC
s High forward transfer admittance
s High forward transfer admittance to input capacitance ratio
1.3 Applications
s Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
x digital and analog television tuners
x professional communication equipment
1 page  
www.DataSheet4U.com
Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
20
ID
(mA)
16
12
001aaa552
(1)
(2)
8
(4)
4
(6) (5)
(3)
0
012345
VGG (V)
(1) ID(B); RG1 = 120 kΩ.
(2) ID(B); RG1 = 150 kΩ.
(3) ID(B); RG1 = 180 kΩ.
(4) ID(A); RG1 = 180 kΩ.
(5) ID(A); RG1 = 150 kΩ.
(6) ID(A); RG1 = 120 kΩ.
Fig 2. Drain currents of MOSFET A and B as a
function of gate1 supply voltage
8. Dynamic characteristics
G1A
G2
G1B
RG1
VGG
DA
S
DB
001aac205
VGG = 5 V: amplifier A is off; amplifier B is on.
VGG = 0 V: amplifier A is on; amplifier B is off.
Fig 3. Functional diagram
8.1 Dynamic characteristics for amplifier A
Table 8: Dynamic characteristics for amplifier A [1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 19 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min
|yfs| forward transfer admittance Tj = 25 °C
26
Ciss(G1) input capacitance at gate1 f = 1 MHz
-
Ciss(G2) input capacitance at gate2 f = 1 MHz
-
Coss output capacitance
f = 1 MHz
-
Crss reverse transfer capacitance f = 1 MHz
-
Gtr power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
32
f = 400 MHz; GS = 2 mS; GL = 1 mS
28
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
23
NF noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
-
f = 400 MHz; YS = YS(opt)
-
f = 800 MHz; YS = YS(opt)
-
Typ
31
2.2
3.0
0.9
20
36
32
27
3.0
1.3
1.4
Max Unit
41 mS
2.7 pF
- pF
- pF
- fF
40 dB
36 dB
32 dB
- dB
1.9 dB
2.1 dB
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
5 of 22
5 Page 
www.DataSheet4U.com
Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
8.2 Dynamic characteristics for amplifier B
Table 11: Dynamic characteristics for amplifier B [1]
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 13 mA; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
|yfs|
Ciss(G1)
Ciss(G2)
Coss
Crss
Gtr
NF
Xmod
forward transfer admittance Tj = 25 °C
input capacitance at gate1 f = 1 MHz
28
-
input capacitance at gate2 f = 1 MHz
-
output capacitance
f = 1 MHz
-
reverse transfer capacitance f = 1 MHz
-
power gain
noise figure
cross-modulation
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 %; fw = 50 MHz; funw = 60 MHz
at 0 dB AGC
33
30
29
-
-
-
[2]
90
33
2.0
3.4
0.85
20
37
34
33
5
1.3
1.4
-
at 10 dB AGC
- 88
at 20 dB AGC
- 94
at 40 dB AGC
100 103
Max Unit
43 mS
2.5 pF
- pF
- pF
- fF
41 dB
38 dB
37 dB
- dB
1.9 dB
2.1 dB
- dBµV
- dBµV
- dBµV
- dBµV
[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.
[2] Measured in Figure 34 test circuit.
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
11 of 22
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet BF1208.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BF1201 | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
| BF1201R | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
| BF1201WR | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
| BF1202 | N-channel dual-gate PoLo MOS-FETs | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |