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BF1208D 반도체 회로 부품 판매점

Dual N-channel dual gate MOSFET



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NXP Semiconductors
BF1208D 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BF1208D
Dual N-channel dual gate MOSFET
Rev. 01 — 16 May 2007
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
I Internal switch to save external components
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio
1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment


BF1208D 데이터시트, 핀배열, 회로
www.DataSheet4U.com
NXP Semiconductors
BF1208D
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
ID
Ptot
|yfs|
Ciss(G1)
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate1
DC
DC
Tsp 109 °C
f = 100 MHz; Tj = 25 °C
amplifier A; ID = 19 mA
amplifier B; ID = 15 mA
f = 100 MHz
amplifier A
amplifier B
Crss reverse transfer capacitance f = 100 MHz
NF noise figure
YS = YS(opt)
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod cross modulation
input level for k = 1 %;
fw = 50 MHz;
funw = 60 MHz
at 40 dB AGC
amplifier A
amplifier B
Tj junction temperature
Min Typ
--
--
[1] -
-
26 31
25 30
[2] -
[2] -
[2] -
2.1
2.1
30
- 0.9
- 1.4
[3] 102
[4] 102
-
105
105
-
Max Unit
6V
30 mA
180 mW
41 mS
40 mS
2.6 pF
2.6 pF
- fF
1.5 dB
2.0 dB
- dBµV
- dBµV
150 °C
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 33 test circuit.
[4] Measured in Figure 34 test circuit.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline Symbol
654
G1A
AMP A
DA
123
G2
S
BF1208D_1
Product data sheet
Rev. 01 — 16 May 2007
G1B
AMP B
sym089
DB
© NXP B.V. 2007. All rights reserved.
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