파트넘버.co.kr WT-2307 데이터시트 PDF


WT-2307 반도체 회로 부품 판매점

Surface Mount P-Channel Enhancement Mode MOSFET



Weitron Technology 로고
Weitron Technology
WT-2307 데이터시트, 핀배열, 회로
Surface Mount P-Channel
Enhancement Mode MOSFET
3 DRAIN
Features:
*Super high dense cell design for low RDS(ON)
RDS(ON) <80 m@VGS =-4.5V
RDS(ON) <100 m@VGS=-2.5V
*Rugged and Reliable
*SOT-23 Package
1
GATE
2
SOURCE
WT-2307
DRAIN CURRENT
- 3 AMPERES
DRAIN SOURCE VOLTAGE
- 20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings (TA=25 C Unless Otherwise Specified)
www.DataSheet4U.com
Rating
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =125 C)(1)
Pulsed Drain Current (2)
Drain-Source Diode Forward Current (1)
VDS
VGS
ID
IDM
IS
Power Dissipation (1)
Maximax Junction-to-Ambient
PD
R θJA
Value
-20
-+12
-3
-11
-1.25
1.25
100
Operating Junction and Storage
Temperature Range
TJ, Tstg
-55 to 150
Device Marking
WT2307=S07
Unite
V
V
A
A
A
W
C/W
C
WEITRON
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WT-2307 데이터시트, 핀배열, 회로
WT-2307
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Static (2)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250 uA
Gate-Source Threshold Voltage
VDS=VGS, ID=-250 uA
Gate-Source Leakage Current
VDS=0V, VGS=-+10V
Zero Gate Voltage Drain Current
VDS=-16V, VGS=0V
Drain-Source On-Resistance
VGS=-4.5V, ID=-4.0A
VGS=-2.5V, ID=-2.0A
On-State Drain Current
VDS=-5V, VGS=-4.5A
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
rDS (on)
ID(on)
Min
-20
-0.5
-
-
-
-
-15
Typ
-
-0.8
-
-
70
85
-
Forward Transconductance
VDS=-5V, ID=-5A
Dynamic(3)
gfs 4
-
Input Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Ciss
Coss
Crss
-
-
-
586
101
59
Switching (3)
Turn-On Time
VGS =-4.5V,VDD =-10V, ID=-1A, R L=10 ,RGEN=6
Rise Time
VGS =-4.5V,VDD =-10V, ID=-1A, R L=10 ,RGEN=6
td(on)
tr
-
-
6.5
32.1
Turn-Off Time
VGS =-4.5V,VDD =-10V, ID=-1A, R L=10 ,RGEN=6
td(off )
-
58.4
Fall Time
VGS =-4.5V,VDD =-10V, ID=-1A, R L=10 ,RGEN=6
tf
-
48
Total Gate Charge
VDS=-10V, ID=-3A, VGS=-4.5V
Qg - 5.92
Gate-Source Charge
VDS=-10V, ID=-3A, VGS=-4.5V
Gate-Drain Charge
VDS=-10V, ID=-3A, VGS=-4.5V
Qgs -
Qgd -
1.36
1.4
Drain-Source Diode Forward Voltage
VDS=0V, IS=-1.25A
VSD - -1.815
Note: 1. Surface Mounted on FR4 Board t <_ 10sec.
2. Pulse Test : PW<_ 300us, Duty Cycle <_ 2%.
2. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
Max
-
-1.5
-+100
1
80
100
-
-
-
-
-
-
-
-
-
-
-
-
-1.2
Unit
V
V
nA
uA
m
A
S
PF
nS
nS
nS
nS
nc
nc
nc
V




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WT-2307 mosfet

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