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RD45HMF1 반도체 회로 부품 판매점

Silicon MOSFET Power Transistor



Mitsubishi Electric 로고
Mitsubishi Electric
RD45HMF1 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
DESCRIPTION
RD45HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band High power amplifiers
applications.
FEATURES
•High power and High Gain:
Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz
•High Efficiency: 50%typ.
APPLICATION
For output stage of high power amplifiers in
800-900MHz Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
3
5.0+/-0.3
18.5+/-0.3
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
www.DataSheet4U.com
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch Channel dissipation
Tc=25°C
Pin Input power
Zg=Zl=50
ID Drain current
-
Tch Channel temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
125
25
15
175
-40 to +175
1.2
UNIT
V
V
W
W
A
°C
°C
°C/W
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
- - 10
IGSS Gate to source leak current VGS=10V, VDS=0V
--1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.0 - 3.0
Pout Output power
f=900MHz ,VDD=12.5V
45 50
-
ηD Drain efficiency
Pin=15W,Idq=2.0A
45 50
-
Load VSWR tolerance
VDD=15.2V,Po=45W(PinControl)
Idq=2.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD45HMF1
MITSUBISHI ELECTRIC
1/7
REV.2 7 Apr. 2003


RD45HMF1 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
160 AMBIENT TEMPERATURE
120
80
40
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
6
4
2
0
01234
Vgs(V)
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
8
Vgs=4V
Vgs=3.7V
6 Vgs=3.4V
4 Vgs=3.1V
Vgs=2.8V
2 Vgs=2.5V
Vgs=2.2V
0
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
300
250
200
Ta=+25°C
f=1MHz
150
100
50
0
0 5 10 15 20
Vds(V)
Vds VS. Coss CHARACTERISTICS
500
400
Ta=+25°C
f=1MHz
300
200
100
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
20
10
0
0 5 10 15 20
Vds(V)
RD45HMF1
MITSUBISHI ELECTRIC
2/7
REV.2 7 Apr. 2003




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RD45HMF1 mosfet

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RD45HMF1

Silicon MOSFET Power Transistor - Mitsubishi Electric