파트넘버.co.kr FDD6637 데이터시트 PDF


FDD6637 반도체 회로 부품 판매점

35V P-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD6637 데이터시트, 핀배열, 회로
August 2006
www.DataSheet4U.com
FDD6637
35V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
Inverter
Power Supplies
Features
–55 A, –35 V RDS(ON) = 11.6 m@ VGS = –10 V
RDS(ON) = 18 m@ VGS = –4.5 V
High performance trench technology for extremely
low RDS(ON)
RoHS Compliant
D
D
G
S
DTO-P-2A5K2
(TO-252)
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS
VDS(Avalanche)
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current
@TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@ TA= 2 5 ° C
(Note 1a)
@ TA= 2 5 ° C
(Note 1b)
Operating and Storage Junction Temperature Range
–35
–40
±25
–55
–13
–100
57
3.1
1.3
–55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
2.2
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size Tape width
FDD6637
FDD6637
D-PAK (TO-252)
13’’
12mm
Units
V
V
V
A
W
°C
°C/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDD6637 Rev C2(W)
www.fairchildsemi.com


FDD6637 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy
(Single Pulse)
IAS Drain-Source Avalanche Current
Off Characteristics(Note 2)
BVDSS
IDSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge, VGS = –10V
Qg Total Gate Charge, VGS = –5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
TA = 25°C unless otherwise noted
Test Conditions
VDD = -35 V, ID= -11 A, L=1mH
VGS = 0 V,
ID = –250 µA
VDS = –28 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
VDS = VGS, ID = –250 µA
VGS = –10 V, ID = –14 A
VGS = –4.5 V, ID = –11 A
VGS = –10 V, ID = –14 A, TJ=125°C
VDS =–5 V, ID = –14 A
VDS = –20 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
VDD = –20 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6
VDS = – 20 V, ID = –14 A
Min Typ Max Units
61 mJ
–14 A
–35 V
–1
±100
µA
nA
–1 –1.6 –3
V
9.7
14.4
14.7
11.6
18
19
m
35 S
2370
470
250
3.6
pF
pF
pF
18 32
ns
10 20
ns
62 100
ns
36 58
ns
45 63
nC
25 35
nC
7 nC
10 nC
FDD6637 Rev. C2(W)
www.fairchildsemi.com




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FDD6637 mosfet

데이터시트 다운로드
:

[ FDD6637.PDF ]

[ FDD6637 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FDD6630A

N-Channel PowerTrench MOSFET - Fairchild Semiconductor



FDD6632

N-Channel Logic Level UltraFET Trench Power MOSFET 30V/ 9A/ 90m - Fairchild Semiconductor



FDD6635

35V N-Channel PowerTrench MOSFET - Fairchild Semiconductor



FDD6637

35V P-Channel PowerTrench MOSFET - Fairchild Semiconductor



FDD6637_F085

P-Channel PowerTrench MOSFET - Fairchild Semiconductor