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Fairchild Semiconductor |
August 2006
www.DataSheet4U.com
FDD6637
35V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Features
• –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V
RDS(ON) = 18 mΩ @ VGS = –4.5 V
• High performance trench technology for extremely
low RDS(ON)
• RoHS Compliant
D
D
G
S
DTO-P-2A5K2
(TO-252)
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS
VDS(Avalanche)
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current
@TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@ TA= 2 5 ° C
(Note 1a)
@ TA= 2 5 ° C
(Note 1b)
Operating and Storage Junction Temperature Range
–35
–40
±25
–55
–13
–100
57
3.1
1.3
–55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
2.2
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size Tape width
FDD6637
FDD6637
D-PAK (TO-252)
13’’
12mm
Units
V
V
V
A
W
°C
°C/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDD6637 Rev C2(W)
www.fairchildsemi.com
Electrical Characteristics
Symbol
Parameter
Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy
(Single Pulse)
IAS Drain-Source Avalanche Current
Off Characteristics(Note 2)
BVDSS
IDSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge, VGS = –10V
Qg Total Gate Charge, VGS = –5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
TA = 25°C unless otherwise noted
Test Conditions
VDD = -35 V, ID= -11 A, L=1mH
VGS = 0 V,
ID = –250 µA
VDS = –28 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
VDS = VGS, ID = –250 µA
VGS = –10 V, ID = –14 A
VGS = –4.5 V, ID = –11 A
VGS = –10 V, ID = –14 A, TJ=125°C
VDS =–5 V, ID = –14 A
VDS = –20 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
VDD = –20 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
VDS = – 20 V, ID = –14 A
Min Typ Max Units
61 mJ
–14 A
–35 V
–1
±100
µA
nA
–1 –1.6 –3
V
9.7
14.4
14.7
11.6
18
19
mΩ
35 S
2370
470
250
3.6
pF
pF
pF
Ω
18 32
ns
10 20
ns
62 100
ns
36 58
ns
45 63
nC
25 35
nC
7 nC
10 nC
FDD6637 Rev. C2(W)
www.fairchildsemi.com
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