파트넘버.co.kr IRL3713SPbF 데이터시트 PDF


IRL3713SPbF 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRL3713SPbF 데이터시트, 핀배열, 회로
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l 100% RG Tested
l Lead-Free
VDSS
30V
PD - 97011B
IRL3713PbF
IRL3713SPbF
IRL3713LPbF
HEXFET® Power MOSFET
RDS(on) max (mW) ID
3.0@VGS = 10V
260A†
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3713PbF
D2Pak
TO-262
IRL3713SPbF IRL3713LPbF
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @Tc = 100°C
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ, TSTG
Linear Derating Factor
Junction and Storage Temperature Range
Max
30
± 20
h260
h180
h1040
330
170
2.2
-55 to +175
Units
V
V
A
W
W/°C
°C
Thermal Resistance
Symbol
iRθJC
fRqCS
fiRθJA
giRθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Typ Max Units
––– 0.45*
0.50
–––
–––
62
°C/W
––– 40
* RθJC (end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes  through ‡ are on page 11
www.irf.com
1
07/22/05


IRL3713SPbF 데이터시트, 핀배열, 회로
IRL3713/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min Typ
30 –––
––– 0.027
RDS(on)
Static Drain-to-Source On-Resistance
––– 2.6
––– 3.3
VGS(th)
Gate Threshold Voltage
1.0 –––
––– –––
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– –––
––– –––
Max
–––
–––
3.0
4.0
2.5
50
20
100
200
-200
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
eem
VGS = 10V, ID = 38A
VGS = 4.5V, ID = 30A
V VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max
gfs Forward Transconductance
76 ––– –––
Qg Total Gate Charge
––– 75 110
Qgs Gate-to-Source Charge
––– 24 –––
Qgd Gate-to-Drain ("Miller") Charge
––– 37 –––
QOSS
Output Gate Charge
61 92
RG Gate Resistance
0.5 ––– 3.4
td(on)
Turn-On Delay Time
––– 16 –––
tr Rise Time
––– 160 –––
td(off)
Turn-Off Delay Time
––– 40 –––
tf Fall Time
––– 57 –––
Ciss Input Capacitance
––– 5890 –––
Coss Output Capacitance
––– 3130 –––
Crss Reverse Transfer Capacitance
––– 630 –––
Units
Conditions
S VDS = 15V, ID = 30A
ID = 30A
fnC VDS = 15V
VGS = 4.5V
VGS = 0V, VDS = 15V
VDD = 15V
ens
ID = 30A
RG = 1.8
VGS = 4.5V
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
dParameter
Single Pulse Avalanche Energy
ÙAvalanche Current
Typ
Max
Units
–––
1530
mJ
––– 46 A
Diode Characteristics
Symbol
Parameter
Min Typ Max Units
Conditions
IS
Continuous Source Current
(Body Diode)
h––– ––– 260
A MOSFET symbol
showing the
ÙhISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
h––– ––– 1040
integral reverse
––– 0.80 1.3
––– 0.68 –––
p-n junction diode.
eeV
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 125°C, IS = 30A, VGS = 0V
e––– 75 110 ns TJ = 25°C, IF = 30A, VR = 0V
––– 140 210 nC di/dt = 100A/µs
e––– 78 120 ns TJ = 125°C, IF = 30A, VR = 20V
––– 160 240 nC di/dt = 100A/µs
www.irf.com




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IRL3713SPbF mosfet

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