DataSheet.es    


PDF IRFP22N60KPBF Data sheet ( Hoja de datos )

Número de pieza IRFP22N60KPBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRFP22N60KPBF (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IRFP22N60KPBF Hoja de datos, Descripción, Manual

PD - 94876
IRFP22N60KPbF
SMPS MOSFET
Applications
HEXFET® Power MOSFET
l Hard Switching Primary or PFS Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
VDSS
600V
RDS(on) typ.
240m
ID
22A
l High Speed Power Switching
l Motor Drive
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
22
14
88
370
2.9
± 30
15
-55 to + 150
300
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Typ.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
380
22
37
Units
mJ
A
mJ
Max.
0.34
–––
40
Units
°C/W
1
12/9/03

1 page




IRFP22N60KPBF pdf
IRFP22N60KPbF
25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+T C
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IRFP22N60KPBF.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRFP22N60KPBFHEXFET Power MOSFETInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar