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Número de pieza | FQA8N80C | |
Descripción | 800V N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FQA8N80C (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! FQA8N80C
800V N-Channel MOSFET
Features
• 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G DS
TO-3P
FQA Series
G
S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQA8N80C
800
8.4
5.3
33.6
± 30
850
8.4
22
4.0
220
1.75
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.57
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQA8N80C Rev. A1
1
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
FQA8N80C Rev. A1
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FQA8N80C.PDF ] |
Número de pieza | Descripción | Fabricantes |
FQA8N80 | 800V N-Channel MOSFET | Fairchild Semiconductor |
FQA8N80C | 800V N-Channel MOSFET | Fairchild Semiconductor |
FQA8N80C_F109 | MOSFET ( Transistor ) | Fairchild Semiconductor |
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