|
|
PDF FDD3N40 Data sheet ( Hoja de datos )
| Número de pieza | FDD3N40 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDD3N40 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
FDD3N40 / FDU3N40
400V N-Channel MOSFET
Features
• 2A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
• Low gate charge ( typical 4.5 nC)
• Low Crss ( typical 3.7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
February 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
DD
GS
D-PAK
FDD Series
GDS
I-PAK
FDU Series
G
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
FDD3N40 / FDU3N40
400
2.0
1.25
8.0
±30
46
2
3
4.5
30
0.24
-55 to +150
300
Typ
--
--
Max
4.2
110
S
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FDD3N40 / FDU3N40 Rev. A
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD3N40 / FDU3N40 Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDD3N40.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDD3N40 | N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |