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STP140NF55 반도체 회로 부품 판매점

N-CHANNEL POWER MOSFET



ST Microelectronics 로고
ST Microelectronics
STP140NF55 데이터시트, 핀배열, 회로
STB140NF55
STP140NF55
N-CHANNEL 55V - 0.0065 - 80A TO-220/D²PAK
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STB140NF55
STP140NF55
55 V
55 V
< 0.008
< 0.008
TYPICAL RDS(on) = 0.0065
ID
80 A
80 A
Figure 1:Package
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
APPLICATIONS
MOTOR CONTROL
HIGH CURRENT, SWITCHING
APPLICATIONS
AUTOMOTIVE ENVIRONMENT
Figure 2: Internal Schematic Diagram
www.DataSheet4U.com
Table 2: Order Codes
Part Number
STB140NF55T4
STP140NF55
MARKING
B140NF55
P140NF55
Table 3:ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID
IDM(•)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
EAS(2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
December 2004
PACKAGE
D²PAK
TO-220
PACKAGING
TAPE & REEL
TUBE
Value
55
± 20
80
80
320
300
2
10
1.3
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 80A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V
Rev. 2
1/11


STP140NF55 데이터시트, 핀배열, 회로
STB140NF55 STP140NF55
Table 4: THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
Table 5: OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
55
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Max.
1
10
±100
Unit
V
µA
µA
nA
Table 6: ON (*)
Symbol
Parameter
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 40 A
Min.
2
Typ.
3
0.0065
Max.
4
0.008
Unit
V
Table 7: DYNAMIC
Symbol
Parameter
gfs (*)
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V
ID = 40 A
VDS = 25V f = 1 MHz VGS = 0
Min.
Typ.
100
5300
1000
290
Max.
Unit
S
pF
pF
pF
2/11




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STP140NF55

N-CHANNEL POWER MOSFET - ST Microelectronics