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N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
DESCRIPTION
The ST6006 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This ST6006 is densigned to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters
and power motor controls, these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and offer additional safetv
margin against unexpected voltage transients.
PIN CONFIGURATION
APPLICATIONS
z Power Supplies
z Converters
z Power Motor controls
z Bridge Circuit
FEATURE
z 20V/2.8A, RDS(ON) = 85m-ohm
@VGS = 4.5V
z 20V/2.4A, RDS(ON) = 115m-ohm
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and
maximum
DC current capability
z SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET
60V/60A
ST6006S / ST6006
ORDERING INFORMATION
Part Number
ST6006T220TG
ST6006T220RG
Package
TO-220-3L
TO-263-2L
Part Marking
ST6006D
ST6006
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150 ) TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
TA=25
TA=70
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
R JA
Typical
60
+/-20
60
39
120
60
120
3.7
150
-55/150
40
62.5
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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