STP13NK60Z 반도체 회로 부품 판매점
N-channel Power MOSFET
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 ST Microelectronics |
STB13NK60Z - STB13NK60Z-1
STP13NK60Z/FP - STW13NK60Z
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB13NK60Z-1
STB13NK60Z
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
600 V
600 V
600 V
600 V
600 V
<0.55 Ω
<0.55 Ω
<0.55 Ω
<0.55 Ω
<0.55 Ω
ID
13 A
13 A
13 A
13 A
13 A
Pw
150 W
150 W
35 W
150 W
150 W
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
Order codes
Package
3
2
1
TO-220
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-247
3
1
D²PAK
Internal schematic diagram
Sales Type
STB13NK60Z-1
STB13NK60ZT4
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
September 2005
Marking
B13NK60Z-1
B13NK60Z
P13NK60ZFP
P13NK60Z
W13NK60Z
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
TUBE
TAPE & REEL
TUBE
TUBE
TUBE
Rev 2
1/17
www.st.com
17
1 Electrical ratings
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20kΩ)
VGS Gate-Source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Value
TO-220 / TO-247
I²PAK / D²PAK
TO-220FP
13
8.2
52
150
1.20
--
600
600
± 30
4000
4.5
13 (Note 1)
8.2 (Note 1)
52 (Note 1)
35
0.27
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Table 2. Thermal data
Rthj-case
Rthj-pcb
Note 7
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220
I²PAK / TO-247
D²PAK
0.83
-- 60
62.5
300
TO-220FP Unit
3.6 °C/W
-- °C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
Max Value
10
400
Unit
A
mJ
2/17
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( stm )
STP13NK60Z mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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