파트넘버.co.kr IRL3705NSPBF 데이터시트 PDF


IRL3705NSPBF 반도체 회로 부품 판매점

HEXFET Power MOSFET



International Rectifier 로고
International Rectifier
IRL3705NSPBF 데이터시트, 핀배열, 회로
www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3705NS)
l Low-profile through-hole (IRL3705NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3705NL) is available for low-
profile applications.
Absolute Maximum Ratings
G
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95381
IRL3705NSPbF
IRL3705NLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.01
S ID = 89A†
D 2 Pak
TO-262
Max.
89†
63
310
3.8
170
1.1
± 16
340
46
1.7
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.90
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
06/08/04


IRL3705NSPBF 데이터시트, 핀배열, 회로
IRL3705NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
55 ––– ––– V
––– 0.056 ––– V/°C
––– ––– 0.010
––– ––– 0.012
––– ––– 0.018
1.0 ––– 2.0 V
50 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100
––– ––– -100 nA
––– ––– 98
––– ––– 19 nC
––– ––– 49
––– 12 –––
––– 140 ––– ns
––– 37 –––
––– 78 –––
––– 7.5 ––– nH
––– 3600 –––
––– 870 –––
––– 320 –––
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA…
VGS = 10V, ID = 46A „
VGS = 5.0V, ID = 46A „
VGS = 4.0V, ID = 39A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 46A…
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS = -16V
ID = 46A
VDS = 44V
VGS = 5.0V, See Fig. 6 and 13 „…
VDD = 28V
ID = 46A
RG = 1.8Ω, VGS = 5.0V
RD = 0.59Ω, See Fig. 10 „…
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 89†
––– ––– 310
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3
––– 94 140
––– 290 440
V TJ = 25°C, IS = 46A, VGS = 0V „
ns TJ = 25°C, IF = 46A
nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width 300µs; duty cycle 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25, IAS = 46A. (See Figure 12)
ƒ ISD 46A, di/dt 250A/µs, VDD V(BR)DSS,
TJ 175°C
… Uses IRL3705N data and test conditions
† Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.




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IRL3705NSPBF mosfet

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IRL3705NSPBF

HEXFET Power MOSFET - International Rectifier