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PDF RD12MVP1 Data sheet ( Hoja de datos )
| Número de pieza | RD12MVP1 | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
DESCRIPTION
RD12MVP1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
OUTLINE DRAWING
8.0+/-0.2
(d)
0.2+/-0.05
(b)
7.0+/-0.2
(a)
(b)
FEATURES
•High Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
•High Efficiency: 55%min. (175MHz)
•No gate protection diode
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
INDEX MARK
[Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW SIDE VIEW
DETAIL A
SIDE VIEW
DETAIL A
(c)
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
UNIT:mm
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to Source Voltage VGS=0V
VGSS
Gate to Source Voltage VDS=0V
ID Drain Current
Pin Input Power
Zg=Zl=50Ω
Pch
Channel Dissipation
Tc=25°C
Tj Junction Temperature
Tstg Storage Temperature
Rthj-c Thermal Resistance
Junction to Case
Note: Above parameters are guaranteed independently.
RATINGS
60
-5 to +20
4.0
1.0
125
+150
-40 to +125
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V
- - 10
IGSS Gate to Source Leak Current VGS=10V, VDS=0V
- - 1.0
VTH Gate Threshold Voltage
VDS=12V, IDS=1mA
1.8 - 4.4
Pout Output Power
f=175MHz,VDD=7.2V
10 12
-
ηD Drain Efficiency
Pin=0.5W,Idq=1.0A
55 57
-
VDD=9.5V,Po=10W(Pin Control)
VSWRT Load VSWR tolerance
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD12MVP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 0.782 -165.5 6.105 69.0 0.024 -16.8 0.743 -162.7
125 0.801 -166.9 4.716 62.4 0.022 -20.5 0.766 -164.0
150 0.817 -168.0 3.724 56.4 0.021 -25.7 0.783 -165.6
175 0.833 -168.8 3.023 51.6 0.019 -27.3 0.799 -166.4
200 0.847 -169.7 2.519 47.5 0.016 -31.1 0.825 -167.2
225 0.860 -170.6 2.137 43.5 0.015 -30.0 0.845 -167.7
250 0.872 -171.6 1.828 39.6 0.013 -34.0 0.864 -168.6
275 0.882 -172.4 1.569 36.0 0.012 -30.9 0.871 -169.6
300 0.894 -173.0 1.361 33.4 0.010 -31.7 0.879 -170.4
325 0.901 -173.5 1.193 31.0 0.008 -24.1 0.888 -171.3
350 0.910 -174.2 1.062 28.5 0.007 -20.9 0.901 -172.1
375 0.917 -175.2 0.947 25.9 0.006 -13.8 0.915 -172.9
400 0.918 -176.1 0.844 23.5 0.005 -1.5 0.918 -173.6
425 0.923 -176.7 0.756 21.5 0.004 16.0 0.917 -174.4
450 0.930 -177.2 0.683 20.4 0.005 35.4 0.922 -174.8
475 0.933 -177.7 0.623 18.7 0.005 43.3 0.928 -175.5
500 0.938 -178.1 0.568 17.2 0.006 53.6 0.935 -176.3
525 0.939 -178.8 0.520 15.7 0.007 58.5 0.943 -176.8
550 0.942 -179.3 0.477 14.3 0.008 63.6 0.941 -177.1
575 0.943 179.7 0.439 13.3 0.009 68.8 0.941 -177.8
600 0.946 179.5 0.407 12.2 0.011 73.9 0.945 -178.3
625 0.950 179.1 0.378 11.3 0.011 72.4 0.949 -178.9
650 0.950 178.8 0.350 10.4 0.012 74.8 0.950 -179.5
675 0.953 178.3 0.327 9.8 0.013 79.1 0.952 -179.8
700 0.952 177.9 0.306 8.9 0.014 77.0 0.954 179.8
725 0.954 177.5 0.286 8.3 0.015 77.2 0.951 179.4
750 0.955 176.9 0.268 7.7 0.016 79.2 0.955 178.9
775 0.954 176.4 0.252 7.2 0.018 78.9 0.957 178.6
800 0.955 176.3 0.238 7.0 0.018 79.9 0.958 178.1
825 0.958 175.9 0.225 6.4 0.020 78.9 0.961 177.7
850 0.958 175.6 0.213 5.9 0.021 80.1 0.954 177.5
875 0.956 175.1 0.203 5.5 0.022 79.0 0.960 177.3
900 0.958 174.5 0.192 5.3 0.023 79.6 0.958 176.8
925 0.956 174.3 0.182 5.3 0.024 79.3 0.962 176.4
950 0.958 174.0 0.175 5.3 0.025 78.3 0.964 176.0
975 0.957 173.8 0.166 5.2 0.026 80.7 0.964 176.0
1000 0.959 173.6 0.158 5.7 0.026 78.8 0.962 175.8
RD12MVP1
MITSUBISHI ELECTRIC
5/7
1st Jun. 2006
5 Page | ||
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