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PDF RD02MUS1 Data sheet ( Hoja de datos )
| Número de pieza | RD02MUS1 | |
| Descripción | Silicon MOSFET Power Transistor | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF po
-wer amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz,520MHz
High Efficiency:65%typ.(175MHz)
High Efficiency:65%typ.(520MHz)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
(0.25)
RoHS COMPLIANT
RD02MUS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD02MUS1
MITSUBISHI ELECTRIC
1/9
10 Jan 2006
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTORISTICS 2
4
Vds=10V
Tc=-25~+75°C
3
-25°C
+25°C
2 +75°C
1
0
23 456
Vgs(V)
RD02MUS1
MITSUBISHI ELECTRIC
5/9
10 Jan 2006
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RD02MUS1.PDF ] | |
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